مناقصه Si wafer

شرح آگهی:

Si wafer 4 inch diameter 1. Material : Si 2. Size : 4 inch diameter (50 Nos) 3. Doping Type: P-Boron 4. Orientation: <111> 5. Thickness: 500 µm +/- 25 µm 6. Resistivity: 1-50 ohm-cm 7. Surface Flatness: <1µm (3mm edge exclusion), 8. Surface Polish: one/both side polished 9. Surface Roughness: less than or equal to 5 angstrom 10. Sealed in Empak or equivalent cassette. 11. Certificate for surface flatness and surface roughness are essential Qty : 50
Si wafer 2 inch diameter 1. Material : Si 2. Size : 2 inch diameter (50 Nos) 3. Doping Type: P-Boron 4. Orientation: <111> 5. Thickness: 500 µm +/- 25 µm 6. Resistivity: 1-50 ohm-cm 7. Surface Flatness: <1µm (3mm edge exclusion), 8. Surface...

شرایط آگهی:

Last Date and time of downloading tender documents 30/12/2019 14:30:00
Last Date and time of submission of tenders online 30/12/2019 14:30:00
Date and time of opening 30/12/2019 15:00:00

برگزار کننده: Department of Atomic Energy, Government of India

منطقه: کشور هند

تاريخ انتشار: 1398/09/19

مهلت دريافت: اعلام نشده

مهلت ارسال: 1398/10/09

تاريخ بازگشايی: اعلام نشده

نوبت اعلام: first

شماره آگهی: DPS/CPU/04/C1/1572

منبع: Department of Atomic Energy, Government of India

تلفن: اعلام نشده

فکس: اعلام نشده

ایمیل: اعلام نشده

وب سایت: اعلام نشده